vs-vskd600 series www.vishay.com vishay semiconductors revision: 29-apr-15 1 document number: 93583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard diodes, 600 a (super magn-a-pak power modules) features ? high current capability ? high surge capability ? high voltage ratings up to 2000 v ? 3000 v rms isolating voltage with non-toxic substrate ? industrial standard package ? ul approved file e78996 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications ? rectifying bridge for large motor drives ? rectifying bridge for large ups electrical specifications product summary i f(av) 600 a type modules - diode, high voltage package smap circuit two scrs doubler circuit super magn-a-pak major ratings and characteristics symbol characteristics values units i f(av) 600 a t c 100 c i f(rms) 942 a t c 100 c i fsm 50 hz 19 000 a 60 hz 20 100 i 2 t 50 hz 1805 ka 2 s 60 hz 1683 i 2 t 18 050 ka 2 s v rrm range 800 to 2000 v t stg , t j range -40 to +150 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j maximum ma vs-vskd600.. 08 800 900 50 12 1200 1300 16 1600 1700 20 2000 2100
vs-vskd600 series www.vishay.com vishay semiconductors revision: 29-apr-15 2 document number: 93583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 600 a 100 c maximum rms forward current i f(rms) 180 conduction, half sine wave at t c = 100 c 942 a maximum peak, one-cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal ha lf wave, initial t j = t j maximum 19.0 ka t = 8.3 ms 20.1 t = 10 ms 100 % v rrm reapplied 16.2 t = 8.3 ms 17.2 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 1805 ka 2 s t = 8.3 ms 1683 t = 10 ms 100 % v rrm reapplied 1319 t = 8.3 ms 1230 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 18 050 ka 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.70 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 0.77 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.28 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 0.25 maximum forward voltage drop v fm i pk = 1800 a, t j = 25 c, t p = 10 ms sine pulse 1.45 v blocking parameter symbol test conditions values units rms insulation voltage v ins t = 1 s 3000 v maximum peak reverse and off-state leakage current i rrm t j = t j maximum, rated v rrm applied 50 ma thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range t j , t stg -40 to 150 c maximum thermal resistance, junction to case per junction r thjc dc operation 0.065 k/w maximum thermal resistance, case to heatsink per module r thc-hs mounting surface smooth, flat and greased 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 6 to 8 nm busbar to smap 12 to 15 approximate weight 1500 g case style see dimensions - link at the end of datasheet super magn-a-pak r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.009 0.006 t j = t j maximum k/w 120 0.011 0.011 90 0.014 0.015 60 0.021 0.022 30 0.037 0.038
vs-vskd600 series www.vishay.com vishay semiconductors revision: 29-apr-15 3 document number: 93583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ngs characteristics fig. 2 - current rati ngs characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 80 90 100 110 120 130 140 150 0 100 200 300 400 500 600 7 00 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) vskd600.. series r thjc (dc) = 0.065 k/w 80 90 100 110 120 130 140 150 0 100 200 300 400 500 600 7 00 30 60 90 120 180 maximum allowable case temperature (c) conduction angle average forward current (a) vskd600.. series r thjc (dc) = 0.065 k/w 80 90 100 110 120 130 140 150 0 200 400 600 800 10 00 dc 30 60 90 120 180 maximum allowable case temperature (c ) conduction period average forward current (a) vskd600.. series r (dc) = 0.065 k/w thjc 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 average forward current (a) rms limit maximum average forward power loss (w) conduction angle 180 120 90 60 30 vskd600.. series per junction t = 150c j 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 10 00 dc 180 120 90 60 30 average forward current (a) rms limit maximum average forward power loss (w) conduction period vskd600.. series per junction t = 150c j 4000 6000 8000 10000 12000 14000 16000 18000 110100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n ) vskd600.. series per junction initial t = 150c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 4000 6000 8000 10000 12000 14000 16000 18000 20000 0.01 0.1 1 peak half sine wave forward current (a ) pulse train duration (s) maximum non repetitive surge curren t initial t = 150c no voltage reapplied rated v reapplied rrm versus pulse train duration . j vskd600.. series per junction
vs-vskd600 series www.vishay.com vishay semiconductors revision: 29-apr-15 4 document number: 93583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward power loss characteristics fig. 8 - forward power loss characteristics fig. 9 - forward power loss characteristics 0 255075100125150 maximum allowable ambient temperature (c) r = 0 . 0 2 k / w - d e l t a r th s a 0 . 0 4 k / w 0. 06 k /w 0 . 0 8 k / w 0 . 1 2 k / w 0. 16 k / w 0 . 2 5 k / w 0 . 3 5 k / w 0 . 5 k / w 0 200 400 600 800 1000 0 200 400 600 800 1000 total rms output current (a) maximum tot al forward power loss (w) vskd600.. series per junction t = 150c j 180 (sine) dc 0 25 50 75 100 125 150 maximum allowable ambient temperature (c ) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 0 2 k / w 0 .0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 500 1000 1500 2000 2500 3000 0 200 400 600 800 1000 1200 total output current (a) maximum total power loss (w) 180 (sine) 180 (rect) 2 x vskd600.. series single phase bridge connected t = 150c j 0255075100125150 maximum allowable ambient temperature (c ) r = 0 . 0 1 k / w - d e l t a r 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w t h s a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 300 600 900 1200 1500 1800 total output current (a) maximum total power loss (w) 120 (rect) 3 x vskd600.. series three phase bridge connected t = 150c j
vs-vskd600 series www.vishay.com vishay semiconductors revision: 29-apr-15 5 document number: 93583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - thermal impedance z thjc characteristic ordering information table circuit configuration circuit description circuit configuration code circuit drawing two diodes doubler circuit d links to related documents dimensions www.vishay.com/doc?95088 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 square wave pulse duration (s) thjc transient thermal impedance z (k/w ) vskd600.. series per junction steady state value: r = 0.065 k/w (dc operation) thjc - module type - circuit configuration d = 2 diodes in series (see circuit configuration table) - current rating - voltage code x 100 = v rrm (see voltage ratings table) device code vsk vs- d 600 - 20 3 4 5 1 3 4 2 5 2 - vishay semiconductors product 1 + - ~ 1 2 3
outline dimensions www.vishay.com vishay semiconductors revision: 20-aug-13 1 document number: 95088 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 super magn-a-pak diode dimensions in millimeters (inches) 52 (2.05) 60.0 (2.36) 48.0 (1.89) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) m10 fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 20.1 (0.78) 36.4 (1.14) 4.5 (0.20) 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 1.0 (0.039) 32 1 ? 6.5 mm 0.3 mm x 4 hole s (typ.)
outline dimensions www.vishay.com vishay semiconductors revision: 09-mar-15 1 document number: 95283 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 super magn-a-pak thyristor/diode dimensions in millimeters (inches) 60.0 (2.36) 48.0 (1.89) 31.0 (1.22) 50.0 (1.97) 44.0 (1.73) m10 fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 20.1 (0.78) 36.4 (1.14) 4.5 (0.20) 54 6 5, 6 = gate 4, 7 = cathode 7 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 1.0 (0.039) 32 1 ? 6.5 mm 0.3 mm x 4 hole s (typ.) 52 (2.05) 9.9 0.5 (0.39 0.02) 16 (0.63)
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